| Summary: | 碩士 === 長庚大學 === 電子工程學研究所 === 96 === In this thesis, we proposed the fabrication of flash memory device with high-k dielectrics, the HfGeOx, as trapping layer is formed by co-sputtering with Hf and Ge. The thermal stability and charge storage can be improved by GeOx embedding in HfOx.
In this thesis, we also compared the electrical characteristic of HfGeOx trapping layer with different tunnel dielectrics: SiO2 and HfTaOx. After different rapid thermal annealing temperature, the hysteresis window does not be increased with arising temperature. It is attributed to crystallize phenomenon in HfGeOx layer with high annealing temperature on SiO2 tunnel dielectrics. On the other hand, we must consider thermal stability of HfTaOx tunnel dielectrics. We use HfTaOx tunnel dielectric due to high thermal stability. The program speed and retention time are improved obviously with RTA temperature less than 900℃.
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