The Study of Ta2O5 Dielectric in Thin Film Transistors
碩士 === 長庚大學 === 電子工程學研究所 === 96 === In this thesis, we apply a new high-K material Ta2O5 as the dielectric layer in low temperature Poly-Si TFT. The post plasma treatment was combined to passivate the interface states of grain boundary between the Ta2O5 and polysilicon layer. Furthermore, the charac...
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| Format: | Others |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04424145845239692291 |