Three Dimensional Device Simulation of DRAM Device
碩士 === 長庚大學 === 電子工程學研究所 === 96 === Three-dimensional device simulation is performed for array devices in dynamic random access memories (DRAM). The doping profile is initially generated by process simulator TSUPREM4. The doping profile is then mapped to device simulator of Sentaurus Device. Diff...
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| Format: | Others |
| Online Access: | http://ndltd.ncl.edu.tw/handle/65188317954118445749 |