Development of Heat Transfer Simulation for Laser Annealing

碩士 === 長庚大學 === 電子工程學研究所 === 96 === Laser annealing process has been used for thin film transistor (TFT) technology. Simulation of laser annealing was developed to simulate temperature profile in planar and non-planar structures. For planar structures, temperature profile with excimer laser and co...

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Main Authors: Ming-Che.Chiang, 江明澤
Other Authors: R.D.Chang
Format: Others
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/06768126107881360638
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spelling ndltd-TW-096CGU054280462016-05-13T04:15:02Z http://ndltd.ncl.edu.tw/handle/06768126107881360638 Development of Heat Transfer Simulation for Laser Annealing 雷射熱退火熱傳模擬之開發 Ming-Che.Chiang 江明澤 碩士 長庚大學 電子工程學研究所 96 Laser annealing process has been used for thin film transistor (TFT) technology. Simulation of laser annealing was developed to simulate temperature profile in planar and non-planar structures. For planar structures, temperature profile with excimer laser and continuous wave laser(CW laser) were simulated. The simulation of excimer laser was used to examine the lift-off process of GaN. Annealing using CW laser was simulated to identify the process condition for improving grain size. For non-planar structures, two dimensional temperature profile with excimer laser was be simulated. The developed simulation platform for laser annealing is implemented in semiconductor process simulators. Therefore, the laser simulation can be performed with complex semiconductor processes and device structures. R.D.Chang 張睿達 2008 學位論文 ; thesis 48
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description 碩士 === 長庚大學 === 電子工程學研究所 === 96 === Laser annealing process has been used for thin film transistor (TFT) technology. Simulation of laser annealing was developed to simulate temperature profile in planar and non-planar structures. For planar structures, temperature profile with excimer laser and continuous wave laser(CW laser) were simulated. The simulation of excimer laser was used to examine the lift-off process of GaN. Annealing using CW laser was simulated to identify the process condition for improving grain size. For non-planar structures, two dimensional temperature profile with excimer laser was be simulated. The developed simulation platform for laser annealing is implemented in semiconductor process simulators. Therefore, the laser simulation can be performed with complex semiconductor processes and device structures.
author2 R.D.Chang
author_facet R.D.Chang
Ming-Che.Chiang
江明澤
author Ming-Che.Chiang
江明澤
spellingShingle Ming-Che.Chiang
江明澤
Development of Heat Transfer Simulation for Laser Annealing
author_sort Ming-Che.Chiang
title Development of Heat Transfer Simulation for Laser Annealing
title_short Development of Heat Transfer Simulation for Laser Annealing
title_full Development of Heat Transfer Simulation for Laser Annealing
title_fullStr Development of Heat Transfer Simulation for Laser Annealing
title_full_unstemmed Development of Heat Transfer Simulation for Laser Annealing
title_sort development of heat transfer simulation for laser annealing
publishDate 2008
url http://ndltd.ncl.edu.tw/handle/06768126107881360638
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