| Summary: | 碩士 === 中原大學 === 化學工程研究所 === 96 === Flat display on plastic substrate could be lightweight, thin and flexible.
However, the intrinsic high gas and water vapor permeation reduces the devices
lifetime and reliability. The improvement in moisture resistance characteristics
of plastic substrate should be resolved for further applications.
In this study, We used Plasma Enhanced Chemical Vapor Deposition
System（PECVD）to grow barrier thin film（SiNx）of high uniformity at low
temperature（64℃）. Furthermore, the barrier property of SiNx thin films was
improved by plasma surface treatment. From the WVTR result, it was found that
the SiNx film deposited with feed ratio NH3 / SiH4 = 3.33 has the best moisture
resistance of 0.096 g/m2/day at 20℃and 60 %RH. And from the analysis of
FTIR spectrum, the amounts of Si-H and Si-O bonds in SiNx thin film could be
reduced after plasma surface treatment. It indicates that the densification of
SiNx thin film can be improved by plasma treatment. The WVTR was decreased
from 0.096 g/m2/day to 0.025 g/m2/day when SiNx film was further treated in N2
plasma.
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