Study of Silicon Nitride Barrier Layer by Plasma EnhancedChemical Vapor Deposition on Flexible Substrate

• Main Authors: HSU-CHUN CHEN, 陳許峻
• Other Authors: none
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/46952365808985964733

碩士 === 中原大學 === 化學工程研究所 === 96 === Flat display on plastic substrate could be lightweight, thin and flexible. However, the intrinsic high gas and water vapor permeation reduces the devices lifetime and reliability. The improvement in moisture resistance characteristics of plastic substrate should be resolved for further applications. In this study, We used Plasma Enhanced Chemical Vapor Deposition System（PECVD）to grow barrier thin film（SiNx）of high uniformity at low temperature（64℃）. Furthermore, the barrier property of SiNx thin films was improved by plasma surface treatment. From the WVTR result, it was found that the SiNx film deposited with feed ratio NH3 / SiH4 = 3.33 has the best moisture resistance of 0.096 g/m2/day at 20℃and 60 %RH. And from the analysis of FTIR spectrum, the amounts of Si-H and Si-O bonds in SiNx thin film could be reduced after plasma surface treatment. It indicates that the densification of SiNx thin film can be improved by plasma treatment. The WVTR was decreased from 0.096 g/m2/day to 0.025 g/m2/day when SiNx film was further treated in N2 plasma.