Investigation of SiGe MOS Devices Prepared by Liquid – Phase -Deposition
碩士 === 大葉大學 === 電機工程學系 === 96 === Silicon dioxide (SiO2) has been grown on SiGe film by using liquid-phase deposition (LPD) methods with H2SiF6 and H3BO3 at room temperature. In this study, the concentrations of H2SiF6 and H3BO3 were 0.4 and 0.01 M, respectively, for temperature of 30 ℃. We found th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99427353741988799306 |