Study of GaN Metal-Semiconductor-Metal Photodetectors

碩士 === 大葉大學 === 電機工程學系 === 96 === In this thesis, Ni/Au Schottky contacts on n-GaN were fabricated and characterized. The barrier height and ideality factor were extracted from the I-V and C-V measurements. In order to enhance the barrier height and evaluate the thermal stability, the Schottky diode...

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Bibliographic Details
Main Authors: C.W.Wu, 吳振緯
Other Authors: H. P. Shiao
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/34894537868087376400