Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure
碩士 === 大葉大學 === 電機工程學系 === 96 === The oxide thin-film field-effect transistors were fabricated from epitaxial heterostructures grown on the LaAlO3(100) substrates by the off-axis rf magnetron co-sputtering system. In these devices, a strontium-doped LaTO3 (SrxLa1-xTiO3, SLTO x = 0.32~0.05) thin film...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48036668498354861639 |
| Summary: | 碩士 === 大葉大學 === 電機工程學系 === 96 === The oxide thin-film field-effect transistors were fabricated from epitaxial heterostructures grown on the LaAlO3(100) substrates by the off-axis rf magnetron co-sputtering system. In these devices, a strontium-doped LaTO3 (SrxLa1-xTiO3, SLTO x = 0.32~0.05) thin film was firstly deposited as the p-type semiconducting channel, and then followed by the growth of a insulating SrTiO3 layer as the gate insulator. The temperature dependence of resistivity and I-V properties were studied. Under negative gate bias, the I-V characteristics indicate the accumulation effect in the channel. From the channel resistance (Vds/Id) data, we found the metal-insulator transition in the channel induced by the gate voltage. The on-off ratio of Id is about 4 for Vg of 0 and -300 mV at Vds of 0.4 V. The typical transconductance of the transistor is 5.5 μS at
Vds = 1 V and room temperature.
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