Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure
碩士 === 大葉大學 === 電機工程學系 === 96 === The oxide thin-film field-effect transistors were fabricated from epitaxial heterostructures grown on the LaAlO3(100) substrates by the off-axis rf magnetron co-sputtering system. In these devices, a strontium-doped LaTO3 (SrxLa1-xTiO3, SLTO x = 0.32~0.05) thin film...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/48036668498354861639 |
id |
ndltd-TW-096DYU00442031 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-096DYU004420312015-11-30T04:02:52Z http://ndltd.ncl.edu.tw/handle/48036668498354861639 Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure 以摻鍶鈦酸鑭異質結構製做薄膜場效電晶體之研究 Chun-Wei Huang 黃俊瑋 碩士 大葉大學 電機工程學系 96 The oxide thin-film field-effect transistors were fabricated from epitaxial heterostructures grown on the LaAlO3(100) substrates by the off-axis rf magnetron co-sputtering system. In these devices, a strontium-doped LaTO3 (SrxLa1-xTiO3, SLTO x = 0.32~0.05) thin film was firstly deposited as the p-type semiconducting channel, and then followed by the growth of a insulating SrTiO3 layer as the gate insulator. The temperature dependence of resistivity and I-V properties were studied. Under negative gate bias, the I-V characteristics indicate the accumulation effect in the channel. From the channel resistance (Vds/Id) data, we found the metal-insulator transition in the channel induced by the gate voltage. The on-off ratio of Id is about 4 for Vg of 0 and -300 mV at Vds of 0.4 V. The typical transconductance of the transistor is 5.5 μS at Vds = 1 V and room temperature. H.H.Sung 宋皇輝 2008 學位論文 ; thesis 64 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 大葉大學 === 電機工程學系 === 96 === The oxide thin-film field-effect transistors were fabricated from epitaxial heterostructures grown on the LaAlO3(100) substrates by the off-axis rf magnetron co-sputtering system. In these devices, a strontium-doped LaTO3 (SrxLa1-xTiO3, SLTO x = 0.32~0.05) thin film was firstly deposited as the p-type semiconducting channel, and then followed by the growth of a insulating SrTiO3 layer as the gate insulator. The temperature dependence of resistivity and I-V properties were studied. Under negative gate bias, the I-V characteristics indicate the accumulation effect in the channel. From the channel resistance (Vds/Id) data, we found the metal-insulator transition in the channel induced by the gate voltage. The on-off ratio of Id is about 4 for Vg of 0 and -300 mV at Vds of 0.4 V. The typical transconductance of the transistor is 5.5 μS at
Vds = 1 V and room temperature.
|
author2 |
H.H.Sung |
author_facet |
H.H.Sung Chun-Wei Huang 黃俊瑋 |
author |
Chun-Wei Huang 黃俊瑋 |
spellingShingle |
Chun-Wei Huang 黃俊瑋 Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure |
author_sort |
Chun-Wei Huang |
title |
Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure |
title_short |
Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure |
title_full |
Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure |
title_fullStr |
Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure |
title_full_unstemmed |
Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure |
title_sort |
study of thin-film field-effect transistors based on sr-doped lanthanum titanate heterostructure |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/48036668498354861639 |
work_keys_str_mv |
AT chunweihuang studyofthinfilmfieldeffecttransistorsbasedonsrdopedlanthanumtitanateheterostructure AT huángjùnwěi studyofthinfilmfieldeffecttransistorsbasedonsrdopedlanthanumtitanateheterostructure AT chunweihuang yǐcànsōngtàisuānlànyìzhìjiégòuzhìzuòbáomóchǎngxiàodiànjīngtǐzhīyánjiū AT huángjùnwěi yǐcànsōngtàisuānlànyìzhìjiégòuzhìzuòbáomóchǎngxiàodiànjīngtǐzhīyánjiū |
_version_ |
1718139537666867200 |