Fabrication and Characterization of Al.25Ga.75N/GaN High Electron Mobility Transistors with Indium Tin Oxide Gate
碩士 === 大葉大學 === 電機工程學系 === 96 === AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and high breakdown characteristics. In this paper, we fabricate photo transistor by using ITO instead of gate metal. Therefore, the characteristics o...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/11311487555025644317 |