Simulation of the characteristic of ZnS Light-Emitting Diodes Vertial and Lateral Structures

• Main Authors: Kai-yi Yu, 游鎧溢
• Other Authors: Chien-Hsing Hsu
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/26460598473455607572

碩士 === 逢甲大學 === 化學工程學所 === 96 === The photoelectric characteristics of ZnS LEDs in vertial and lateral structure have been compared by the simulation softwave, COMSOL Multiphysics. Under 5 V forward bias, we have found that the optimum thickness of the active layer is 200 nm for both structures. And there is little difference in the output intensity from both geometry LEDs, under different p-type and n-type doping concentrations. There results show that we can use the lateral structure instead of the vertial one, which needs more sepcific requirement in the making.