| Summary: | 碩士 === 逢甲大學 === 材料科學所 === 96 === This research uses the multi-target source ultra-high-vacuum magnetron sputtering system with use pulse direct-current power supply under the fixed Ar working pressure（PAr=2.0 Pa）to deposit the TiOx thin films, simultaneously matching the direct-current power supply supply dopping Si of PowerDC = 0W, 25W, 50W, 100W.The Obtained reactive sputtered TiOx and the TiOx-SiOx thin films are heated under the atmosphere at 500 °C/1 hr. and 550 °C/1 hr.. The annealing transformation of crystal structure, and the Si dopping on the hydrophilicity property of the thin films are studied.
X-ray photo-electron spectroscopy, the Profilometer scopy, the Field Emission Scanning Electron Microscope （FE-SEM）, the Atomic Force Microscope（AFM）, Glancing-Incidence X-ray Diffraction （GIXRD）, the contact angle, and UV-Visible spectroscopy examinations demonstrated: As-deposited TiOx-SiOx（0W, 25W, 50W, 100W）presents the amorphous structure. TiOx-SiOx（0W, 25W, 50W）thin films after heat treatment (500 °C, 550 °C) are crystalline cubic A-TiO2+R-TiO2 structures. The reactive sputtering deposied TiOx and TiOx-SiOx thin films, by Profilometer, FE-SEM and AFM observations, thin films surface are smooth and transparent. After the annealing, the boil with the high temperature humidity water-drop angle of contact dynamic test water affinity, the UV-Vis. penetration coefficient gauging result revelation: TiOx-SiOx (25W, 50W) thin films can resist the darkroom declining phenomenon, the contact angle may be <5°, having the superhydrophilicity performance.
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