Highly Thermal Stability Nickel Silicide Thin Film by Depositing a Silicon Carbide Layer
碩士 === 逢甲大學 === 產業研發碩士班 === 96 === With the coming of nano-meter era, more and more processes have to face many difficult challenges. There are some significant problems such as poly gate depletion effect, boron penetration and high gate resistance for the conventional poly-silicon gate. Therefore,...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93878433594721491769 |