Investigations on Diulte-Channel InGaAsSb/GaAs Heterostructure Field-Effect Transistors with Gate Passivation
碩士 === 逢甲大學 === 電子工程所 === 96 === This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In0.2Ga0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effe...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46776826548094744174 |