Depositing CuMn alloy interconnects by chemical displacement
碩士 === 逢甲大學 === 電子工程所 === 96 === For the 22 or 15nm generation technology, the CuMn alloy is a trend of interconnect. The advantages are “Self-form and reducing the via resistance”, the CuMn alloy is the key to form the self-formed diffusion barrier. As the CuMn alloy interconnect were annealed, the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68567039471311096043 |