| Summary: | 碩士 === 逢甲大學 === 電子工程所 === 96 === For the 22 or 15nm generation technology, the CuMn alloy is a trend of interconnect. The advantages are “Self-form and reducing the via resistance”, the CuMn alloy is the key to form the self-formed diffusion barrier. As the CuMn alloy interconnect were annealed, the manganese (Mn) in the CuMn alloy will be combined with oxygen in the dielectric layer to form MnSixOy. MnSixOy can be a diffusion barrier. So, there is no series resistance of diffusion barrier between via and contact hole, and the RC delay can be reduced.
For the future, the dielectric constant will be decreased, and the more porous in the dielectric layer is the major method from now on. But the serious problems are machine strength and hydrophilic for the reliability of dielectric layer, especially the film is processed by CMP. The chemical displacement is a method to solve these problems.
The goal of this research, the CuMn alloy is deposited by chemical displacement, under the chemical solution temperature and chemical solution pH value. The surface and displacement of film are analyzed to find out the optimum displacement condition.
On the basis of the experiment results described above, the Si can be displaced to form the CuMn alloy by chemical displacement. The optimum displacement condition is pH：2.5 & 40℃. The smooth CuMn alloy film, appropriate grain size and appropriate displacement rate can be displaced by the optimum condition. The displacement time is confined to the quantity contained of Si and the surface between Si and solution.
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