Depositing CuMn alloy interconnects by chemical displacement
碩士 === 逢甲大學 === 電子工程所 === 96 === For the 22 or 15nm generation technology, the CuMn alloy is a trend of interconnect. The advantages are “Self-form and reducing the via resistance”, the CuMn alloy is the key to form the self-formed diffusion barrier. As the CuMn alloy interconnect were annealed, the...
Main Authors: | Ming-Jie Dai, 戴明傑 |
---|---|
Other Authors: | Wen-Luh Yang |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/68567039471311096043 |
Similar Items
-
Investigation of CuMn alloy in copper metallization process
by: Hsiu-AnYen, et al.
Published: (2012) -
Electrodeposition of CuMn Films in Non-aqueous Solution
by: Chiang, Wei-Shen, et al.
Published: (2017) -
The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films
by: Ho-Yun Lee, et al.
Published: (2019-01-01) -
Synthesis and Magnetism of CuMn2-xMgxO4(x=0~0.8) Nanowires
by: Po-Chien Cheng, et al.
Published: (2013) -
Heterogeneous CuMn2O4, Pt, Pd and SnO2 catalysts for ambient temperature oxidation of carbon monoxide
by: Aldridge, James K. W.
Published: (2011)