The Design and Analysis of High-Electron-Mobility-Transistors
碩士 === 義守大學 === 電子工程學系碩士班 === 96 === The design and analysis of the characteristics of the high-electron-mobility transistor and metal-oxide-semiconductor high-electron-mobility transistor have been investigated in this paper. The two-dimensional-electron-gas (2DEG) is calculated by solving the on...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35704666795334011052 |