The Design and Analysis of High-Electron-Mobility-Transistors

• Main Authors: Fang-Ming Lee, 李芳名
• Other Authors: Kuan-Wei Lee
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/35704666795334011052

碩士 === 義守大學 === 電子工程學系碩士班 === 96 === The design and analysis of the characteristics of the high-electron-mobility transistor and metal-oxide-semiconductor high-electron-mobility transistor have been investigated in this paper. The two-dimensional-electron-gas (2DEG) is calculated by solving the one-dimensional Poisson’s equation coupled with the concepts of the quantum mechanics. By establishing the self-consistent method for the calculation of the 2DEG, We can obtain the different sheet carrier density under different bias conditions. The dc characteristics along the horizontal direction (i.e. source-drain direction) in the channel layer of the MOS-HEMT and HEMT can be analyzed by solving the horizontal one-dimensional Poisson’s equation. Thus, the distributions of potential, electric field, and the sheet carrier densities along the horizontal direction in the channel layer are investigated. The dc characteristics along the vertical direction (i.e. gate-substrate direction) for the MOS-HEMT and HEMT can also be analyzed by solving the vertical one-dimensional Poisson’s equation. Finally, We can compare the electric field along the y direction and x direction, especially around the gate terminal. We compare the electric field around the gate terminal of the HEMT and the MOS-HEMT, and we can design the sizes and the parameters of the devices to obtain the best results by our analytical model to reduce the gate leakage currents of the devices.