Design of New –Type Frequency Divider Using BiCMOS Process

碩士 === 崑山科技大學 === 電子工程研究所 === 96 === The conventional negative-differential-resistance(NDR) is fabricated by Ⅲ-Ⅴ compound material, such as GaAs and InP. It has the advantage of high electron mobility. However it is not very easy to integrate with other devices and ircuits. In this paper, a novel ne...

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Bibliographic Details
Main Authors: Cheng-Syuan Wang, 王丞軒
Other Authors: 甘廣宙
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/dh4wnp