| Summary: | 碩士 === 崑山科技大學 === 機械工程研究所 === 96 === In this paper, we fabricated polycrystalline silicon films with very large grains by the method of nanometer thick aluminum induced crystallization (nano-AIC) on the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD) and analyzed the best function by using different aluminum induced crystallization.
One part of this paper, the effect of annealing ramp-up time of the nano-AIC process on the crystalline volume fraction is discussed. Four different annealing ramp-up time periods, 1, 5, 10, 20 hours, respectively; are fabricated and tested. The results show that crystalline volume fraction calculated is about 50~60% and the average crystalline size grows from 20 to 100 μm under four different annealing ramp-up time. The mobility of the poly-Si film increases with the increase of annealing ramp-up time. The maximum mobility obtained in this paper is about 1.5 cm2/Vs in the case of 20 hours of annealing ramp-up time. The leak current density is between 10-4~10-6 A/cm2,
The other part of this paper , we fabricated AIC specimens with in this five different aluminum thicknesses of 10, 20, 40,80 and 160 nm, respectively. The results show that crystalline volume fraction calculated is about 42~90%. In our analysis, we can see when deposited aluminum thickness varies from 10 to 20 nm, it is not possible to induce poly silicon thin film from the results of, Raman and XRD analyses. Therefore, we can confirm poly silicon will be induced only when aluminum thickness deposition is over 30 nm.
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