Dielectric properties for ZrTiO4-Zr5Ti7O24 thin films prepared by magnetron sputtering and annealing

• Main Authors: chyen-ter Li, 李建德
• Other Authors: Shiyung Chiou
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/40056167454850800360

碩士 === 國立高雄應用科技大學 === 模具工程系碩士班 === 96 === The dielectric thin films of ZrTiO4-Zr5Ti7O24 are intermittently deposited on Si(100) substrates by magnetic sputtering with targets of pure titanium and zirconium, The annealing processes induce the diffusion between TiO2 and ZrO2 to make the ZrTiO4 thin films. The there steps including annealing period determination、increment of Ti with the fixed 10 seconds of zirconium target bombardment and increment of Ti with the fix 15 seconds of zirconium target bombardment are performed to obtain the optimal dielectric thin films. The crystalline structures、compounds identification and film’s growth morphologies are evaluated by X-ray diffraction (XRD)、Raman spectroscope and scanning electron microscope (SEM), respectively. The electric properties are measured using semiconductor parameter analyzer (SPA). The results indicate that the structures of ZrTiO4-Zr5Ti7O24 form after 12 hours annealing at 800℃. Under the fixed 10 seconds of zirconium bombardment, the structures of ZrTiO4 are easily found while the amounts of Ti and Zr reach the stoichiometry and the structures of Zr5Ti7O24 are preferably built rise with the increase of Ti. The same trend occurs under the fixed 15 seconds of zirconium bombardment. The leakage currents of the films lower rise and the dielectric constants with the increase of Ti. The films under the fixed 15 seconds of zirconium bombardments appear the better electric properties than that under the fixed 10 seconds of zirconium bombardments.