The Investigations of Electrical Characteristic on Different Interfacial Layer n-type MOSFETs with High-k Dielectrics in Nano Technology
碩士 === 明新科技大學 === 電子工程研究所 === 96 === In order to pursue a lower cost, make the manufacturing process technique continuously progressed. The critical dimension of device is steadily tiny to shrink. Up to now, the device dielectric thickness scaling down to 1.1 nm in 2010 year by 2007 ITRS roadmap. Wh...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90031614814610678673 |