Design and Fabrication of Light Emitting Diode Packaging with High Thermal Dissipation
碩士 === 國立中興大學 === 材料科學與工程學系 === 96 === Using maskless self-alignment lithography and metal electroplating techniques, we have demonstrated an enhanced performance of lateral-electrodes GaN light emitting diode (LED) with a reflective copper (Cu) heating spreading layer. The ANSYS and TracePro softwa...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57725031657840518936 |
| Summary: | 碩士 === 國立中興大學 === 材料科學與工程學系 === 96 === Using maskless self-alignment lithography and metal electroplating techniques, we have demonstrated an enhanced performance of lateral-electrodes GaN light emitting diode (LED) with a reflective copper (Cu) heating spreading layer. The ANSYS and TracePro softwares were used to simulate the thermal and optical performance of this novel LED package. The spinning coated photoresist on glass carrier is used as a mold to form the cup-shaped Au/Cr/Ag mirror and Cu heat spreader with a base dimension of 3 mm x 3 mm, which effectively enhance the heat dissipation down to the metal plate and reap the light flux generated. From the side emission. With the aid of reflective Cu heat spreader, the encapsulated LEDs injected into 1 A current yields the intensity of 9700 mcd and around 2 times increase in electric-optical conversion efficiency compared to hat of conventional lateral-electrodes LEDs on sapphire. The light output power of 700 mW and an around 2.7 times. The power efficiency of 16% and an around 2.8 times. The measurements of infrared thermal images confirm a lower temperature and a higher uniformity of the temperature distribution for the devices with the reflective Cu heat spreader, the surface temperature decrease 32% with the aid of reflective Cu heat spreader.
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