Preparation of ZrN thin films by physical vapor deposition using air as a reactive gas
碩士 === 國立中興大學 === 材料科學與工程學系 === 96 === In the literature, preparation of ZrN thin films by physical vapor deposition (PVD) often requires the vacuum environment to avoid the oxygen contamination in the champer and employs N2 as the reactive gas. Conventionally, it takes much time to achieve a low ba...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13930266872746324565 |