Fabrication and Characterization of Low-Dislocation-Density GaN Epilayers on Sapphire Substrates
碩士 === 國立中興大學 === 材料科學與工程學系 === 96 === Material properties of GaN epilayers grown on the wet-etched protruding, truncated and invert-pyramidal recessing patterned sapphire substrates (PSSs) as well as planar substrates , are in detail investigated, along with its relationship to their optical charac...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/04977246129853093453 |