Characteristics of ZnO films grown on (01-12) sapphire substrates by atomic layer deposition
碩士 === 國立中興大學 === 物理學系所 === 96 === In this thesis, low temperature (RT) zinc oxide (ZnO) films were directly grown on (01-12)sapphire substrates at 300oC by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O). Influences of post-annealing parameters including annealing tem...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/30209922500558119926 |