Design and Verification of Vertical Hydride Vapor-Phase Epitaxy Reactor
碩士 === 國立中興大學 === 精密工程學系所 === 96 === HVPE manufacturing is an important stage in the process of the semiconductor manufacturing, and it is also the key technique of the semiconductor manufacturing in the recent years. In the manufacturing process, the numerical simulation analytical method is the mo...
Main Authors: | Ying-Hong Bai, 白英宏 |
---|---|
Other Authors: | Dong-Sing Wuu |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/29950855984433595085 |
Similar Items
-
Gallium hydride vapor phase epitaxy of GaN nanowires
by: Othonos Andreas, et al.
Published: (2011-01-01) -
Study of GaN Substrates Developed by Hydride Vapor Phase Epitaxy
by: Hsin-Hsiung Huang, et al.
Published: (2008) -
Properties of epitaxial lateral overgrowth of GaAsP and GaAs grown by hydride vapor phase epitaxy
by: Srinivasan, Lakshman
Published: (2020) -
Study of GaN Bulks Grown by Hydride Vapor Phase Epitaxy with Cathodoluminescence
by: Yuan-Ken Sung, et al.
Published: (2007) -
Erbium energy levels in GaN grown by hydride vapor phase epitaxy
by: Y. Q. Yan, et al.
Published: (2020-12-01)