Characteristics of W/WNx bi-layer gate electrodes on HfOx gate dielectrics
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 96 === Hafnium oxide (HfOx) gate dielectrics of various thicknesses are prepared on silicon wafers by E-beam evaporation using a HfO2 source. Tungsten (W), tungsten nitride (WNx) and W/WNx bi-layer gate electrodes are subsequently deposited by magnetron sputtering...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56526712392588923698 |