Investigation of GaAs-based Long Wavelength Lasers and Photodetectors Grown by MOVPE
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === The main purpose of the dissertation is to develop the GaAs-based materials, such as including the highly strained InGaAs/GaAs, InGaAsN/GaAs and type II GaAsSb/GaAs quantum wells (QWs) which are capable of delivering long wavelength operations. The growth co...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75332761081046066252 |