The study of fabricate planar GaN p-n junction photodetectors using spin on dopant technique
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this thesis, the p-GaN III-V alloys had been grown and characterized by metal organic chemical vapor deposition system (MOCVD). Several analysis techniques, such as Hall measurement, photoluminescence (PL), X-ray diffraction (XRD), atomic force microscopy...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70861857472131479412 |