The investigation of ZnO based transparent thin film transistor and photodetector
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === ZnO is a popular material in recently years, we can easily find out many papers about it’s material and devices research. Because of it’s large band gap (3.37eV) and exciton binding energy (60meV).We use it as our channel layer to fabricate our devices. The...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/23366388189752187590 |