Structural Development of GaN-Based Materials and Light Emitting Diodes Grown by Metalorganic Vapor Phase Epitaxy Technique
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this dissertation, the improved properties of GaN-based materials and devices are demonstrated by metalorganic vapor phase epitaxy (MOVPE) technique. To enhance the light intensity of light emitting diode (LED) required for human life, some growth methods...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68062496374918051463 |