The Study of nc-SiGe Bulk Barrier Phototransistor Prepared by PECVD with Layer-by-Layer(LBL) Technology
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this thesis, we used layer-by-layer method (LBL), to develop nc-SiGe phototransistor on glass substrate. The LBL method takes the advantage of hydrogen plasma annealing to break the bonds within Si and Ge compound, thus growing the nc-SiGe thin films effe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71234797883956438279 |