Epitaxial Growth and Device Fabrication of Nitride Based Photodetectors
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this dissertation, the III-V nitride-based compound semiconductors had grown by metal organic vapor phase epitaxy (MOCVD). The different way to grow the high quality GaN epitaxial layer was carried out and then applied in UV photo-detection. In the materi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84192094301365710623 |