Investigations of New Dilute InGaAsN, InGaAsNSb and InGaAsSb Channel Heterostructure Field-Effect Transistors
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === We have successfully fabricated and investigated GaAs-based heterostructure field-effect transistors (HFETs) with dilute InGaAsN/InGaAsNSb/InGaAsSb channel layers, respectively. Through proposed the dilute N and Sb channel engineering, the influences on devi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04840620430293485115 |