Fabrication of InAlAs/InGaAs/GaAs Metamorphic High Electron Mobility Transistors(MHEMTs) with Electroless Plated Technology
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this thesis, InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors (MHEMTs) grown by molecular beam epitaxy (MBE) system have been fabricated and investigated. Some reports have illustrated that high energy physical vacuum depositions easily c...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/72892216728223137935 |