Graded Contact Geometry Design for the Fabrication of Large-Area High-Power GaN-Based Light-Emitting Diodes
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === Vertical structure GaN-based light-emitting diodes (VM-LEDs) are commonly made in large areas with high intensity to increase the luminous flux in each crystal. As the area increases, the current distribution over the compound becomes uneven, thus increased...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93544568506390270514 |