Using D2 Post-Deposition Anneal to Improve the Reliability of Atomic-Layer-Deposited HfO2 under Nano scaled Stresses
碩士 === 國立暨南國際大學 === 電機工程學系 === 96 === Abstract In this thesis, we used conductive atomic force microscopy (C-AFM) in conjunction with semiconductor parameter analyzer Agilent (HP4156C), Nano-scaled stress was applied to the atomic-layer-deposited (ALD) HfO2 high-k dielectrics prepared with N2,...
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| Format: | Others |
| Language: | zh-TW |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10993710755363423989 |