Femtosecond laser annealing: a novel approach for recrystallization, dopant profile engineering and fabrication of Thin Film Transistors
博士 === 國立交通大學 === 光電工程系所 === 96 === The main topics of this thesis can be divided into three categories; (1) near-infrared femtosecond laser-induced crystallization of amorphous silicon and the performance of thin film transistors (TFTs) annealed by this technique; (2) dopant profile engineering by...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/z4rd9n |