Study of InGaAs/InAs Superlattice Channel Metamorphic HEMT (MHEMT) for High-frequency and Low Noise Applications
碩士 === 國立交通大學 === 材料科學與工程系所 === 96 === In this dissertation, the feasibility of using (In0.53Ga0.47As)/(InAs) superlattice as the channel in the InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMT) for high frequency applications is studied. The indium content in the channel can...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54455627729760439006 |