Impact of Ge ion implantation on the Nickel Silicide Contacted Junction
碩士 === 國立交通大學 === 電子工程系所 === 96 === ABSTRACT The thermal stability of NiSi/Si structure is one of the important research topics in the nano CMOS area. Several methods have been proposed to improve the thermal stability of NiSi. In this thesis ,a novel method of using Ge ion implantation( Ge I/I) to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82568502951250443044 |