A study on the influence of layout parameters on electrical characteristics of high-voltage MOSFETs

碩士 === 國立交通大學 === 電子工程系所 === 96 === With the progress of integrated circuit technology, high-voltage devices with high power have developed into the market of HV-MOSFETs from the market of thyristors and bipolar power transistors in 1970’s, which have become the most preferable devices to be integra...

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Bibliographic Details
Main Authors: Hsu-Ju Liu, 柳旭茹
Other Authors: Bing-Yue Tsui
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/75090933036808937249