Nonvolatile Memory with High-k Dielectric Materials and Nanocrystals
碩士 === 國立交通大學 === 電子工程系所 === 96 === In this thesis, we design various nonvolatile memories with several high-k material films as charge-trapping layers. The high-k layers replace the conventional silicon nitride trapping layer and silicon dioxide blocking layer in the SONOS structure. We modified th...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/44206378672516968607 |