The Investigation of Low Threshold Voltage Dual Metal Gate MOSFET Technology
博士 === 國立交通大學 === 電子工程系所 === 96 === With the continuous scaling trend of complementary metal-oxide-semiconductor field effect transistors (C-MOSFETs) technology, poly-silicon gates encounter several inherent drawbacks beyond the 45 nm technology node including high resistivity, boron penetration and...
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| Format: | Others |
| Language: | en_US |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65980070632328986251 |