Effects of Ti top electrode and embedded Mo metal on sputtered deposited ZrO2-based resistive switching memory devices
碩士 === 國立交通大學 === 電子工程系所 === 96 === Recently, since nonvolatile memories acquire a lot of attention and flash memories face the issue of scale limit, the extensive studies have been carried out to explore the next generation nonvolatile memory. The resistive switching random access memories (RRAMs)...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75141853051483648107 |