TCAD Simulation of Random Program Charge Induced Threshold Voltage Fluctuations in SONOS Device
碩士 === 國立交通大學 === 電子工程系所 === 96 === Instead of using a conducting poly layer as a storage node in a conventional floating gate device, a charge trap cell utilizes discrete trapping centers of an appropriate dielectric film to achieve a similar memory function. In such structure, the channel potentia...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48692930445926805661 |