A Study of Low Temperature Activated Junction Formed byImplant Into Silicide Method
博士 === 國立交通大學 === 電子工程系所 === 96 === Many new materials have been introduced to ensure the device with high quality as their physical lengths are scaled down. However, some materials may not have good thermal reliabilities, hence making the process integration more and more complex. As the result, so...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21746472408472805092 |