New Advanced Process of Ultrathin Oxynitride on the Characteristics of pMOSFET
碩士 === 國立交通大學 === 電子工程系所 === 96 === According to the scaling rules, aggressive scaling has lead to silicon dioxide (SiO2) gate dielectrics as ultra thin in state-of-the-art CMOS technologies. As a consequence, static leakage current due to direct tunneling through the gate oxide has been increasing...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/85654928294080021285 |